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FGA50N100BNTD2 1000V, 50A NPT-Trench IGBT CO-PAK
February 2009
FGA50N100BNTD2
1000V, 50A NPT-Trench IGBT CO-PAK
Features
* * * * * High Speed Switching Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A High Input Impedance Built-in Fast Recovery Diode RoHS Compliant
tm
General Description
Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for micro-wave, Induction heating (I-H) Jar, induction heater, home appliance.
Applications
Micro-Wave Oven, I-H Cooker, I-H Jar, Induction Heater, Home Appliance.
C
G TO-3P
GCE
E
Absolute Maximum Ratings
Symbol
VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL
Description
Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds @ TC = 25oC @ TC = 100 C
o
Ratings
1000 25 @ TC = 25oC @ TC = 100oC 50 35 200 @ TC = 100oC 15 150 156 63 -55 to +150 -55 to +150 300
Units
V V A A A A A W W
o o o
C C C
Notes: 1: Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT) RJC(DIODE) RJA
Parameter
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Typ.
-
Max.
0.8 1.2 40.0
Units
o
C/W
oC/W o
C/W
(c)2009 Fairchild Semiconductor Corporation
1
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FGA50N100BNTD2 Rev. A
FGA50N100BNTD2 1000V, 50A NPT-Trench IGBT CO-PAK
Package Marking and Ordering Information
Device Marking
FGA50N100BNTD2
Device
FGA50N100BNTD2
Package
TO-3PN
Packaging Type
Rail / Tube
Max Qty Qty per Tube
30ea
per Box
-
Electrical Characteristics of the IGBT
Symbol
Off Characteristics BVCES ICES IGES
TC = 25C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA Collector Cut-Off Current G-E Leakage Current VCE = 1000V, VGE = 0V VGE = 25V, VCE = 0V
1000 -
-
1.0 500
V mA nA
On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 60mA, VCE = VGE IC = 10A, VGE = 15V IC = 60A, VGE = 15V IC = 60A, VGE = 15V, TC = 125oC Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 10V, VGE = 0V, f = 1MHz 6000 260 200 pF pF pF 4.0 5.5 1.5 2.5 3.1 7.0 1.8 2.9 V V V V
Switching Characteristics td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 600V, IC = 60A, VGE = 15V, TC = 25oC VCC = 600V, IC = 60A, RG = 10, VGE = 15V, Inductive Load, TC = 25oC 34 68 243 65 257 45 95 100 350 ns ns ns ns nC nC nC
Electrical Characteristics of the Diode
VFM trr IR Diode Forward Voltage Diode Reverse Recovery Time Instantaneous Reverse Current IF = 15A IF = 60A
TC = 25C unless otherwise noted
-
2.9 4.0 60 -
3.2 4.7 75 2
V V ns A
IF = 60A, di/dt = 100A/us VRRM = 1000V
FGA50N100BNTD2 Rev. A
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FGA50N100BNTD2 1000V, 50A NPT-Trench IGBT CO-PAK
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
200
TC = 25 C
o
Figure 2. Typical Output Characteristics
200
TC = 125 C
o
20V 15V 10V
20V 15V 10V 9V
Collector Current, IC [A]
9V
120
Collector Current, IC [A]
160
160
120
8V
80
8V
80
7V
40
7V VGE = 6V
40
VGE = 6V
0 0 2 4 6 8 Collector-Emitter Voltage, VCE [V] 10
0 0 2 4 6 8 Collector-Emitter Voltage, VCE [V] 10
Figure 3. Typical Saturation Voltage Characteristics
200
Common Emitter VGE = 15V
Figure 4. Transfer Characteristics
200
Common Emitter VCE = 20V
Collector Current, IC [A]
TC = 25 C TC = 125 C
o
Collector Current, IC [A]
160
o
o 160 TC = 25 C
TC = 125 C
o
120
120
80
80
40
40
0 0 1 2 3 4 5 6 Collector-Emitter Voltage, VCE [V] 7
0 2 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12
Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level
4.5
Collector-Emitter Voltage, VCE [V]
Common Emitter VGE = 15V 90A
Figure 6. Saturation Voltage vs. VGE
20
Collector-Emitter Voltage, VCE [V]
Common Emitter TC = -40 C
o
16
60A
3.0
30A
12
60A
8
30A 90A IC = 10A
IC = 10A
4
1.5
1.0 25
50 75 100 125 o Collector-EmitterCase Temperature, TC [ C]
0
0
4 8 12 16 Gate-Emitter Voltage, VGE [V]
20
FGA50N100BNTD2 Rev. A
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FGA50N100BNTD2 1000V, 50A NPT-Trench IGBT CO-PAK
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Collector-Emitter Voltage, VCE [V]
Common Emitter
o
Figure 8. Saturation Voltage vs. VGE
20
Common Emitter
o
Collector-Emitter Voltage, VCE [V]
TC = 25 C
TC = 125 C
16
16
12
60A
12
60A
8
30A 90A
8
30A 90A
4
IC = 10A
4
0
0
4 8 12 16 Gate-Emitter Voltage, VGE [V]
20
0 0
IC = 10A
4 8 12 16 Gate-Emitter Voltage, VGE [V]
20
Figure 9. Capacitance Characteristics
8000
Figure 10. Gate charge Characteristics
15
Common Emitter
o
Gate-Emitter Voltage, VGE [V]
TC = 25 C
12
VCC = 200V
6000
Capacitance [pF]
Cies Common Emitter VGE = 0V, f = 1MHz
9
400V 600V
4000
TC = 25 C
o
6
2000
Coes Cres
3
0 1 10 Collector-Emitter Voltage, VCE [V]
30
0 0 55 110 165 220 Gate Charge, Qg [nC] 275
Figure 11. SOA Characteristics
500
Figure 12. Load Current vs. Frequency
120
VCC = 600V load Current : peak of square wave
Load Current [A]
100
Collector Current, Ic [A]
10s
100 80 60 40
10
100s 1ms
1
*Notes:
10 ms DC
o o
0.1
1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
20 Duty cycle : 50% o
T = 100 C
C
0.01 1
10 100 1000 3000 Collector-Emitter Voltage, VCE [V]
0 0 10
Power Dissipation = 63W
10 10 Frequency [kHz]
1
2
10
3
FGA50N100BNTD2 Rev. A
4
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FGA50N100BNTD2 1000V, 50A NPT-Trench IGBT CO-PAK
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs. Gate Resistance
300
Figure 14. Turn-off Characteristics vs. Gate Resistance
2000
1000
td(off)
Switching Time [ns]
100
tr
Switching Time [ns]
100
td(on)
tf Common Emitter VCC = 600V, VGE = 15V IC = 60A TC = 25 C
o o
Common Emitter VCC = 600V, VGE = 15V IC = 60A TC = 25 C TC = 125 C
o o
10 10
20 30 40 Gate Resistance, RG []
50
10 10
TC = 125 C
20
30
40
50
Gate Resistance, RG []
Figure 15. Turn-on Characteristics vs. Collector Current
200
Figure 16. Turn-off Characteristics vs. Collector Current
1000
100
Switching Time [ns]
Switching Time [ns]
tr
td(off) Common Emitter VGE = 15V, RG = 10
td(on)
100
TC = 25 C TC = 125 C
o
o
tf
Common Emitter VGE = 15V, RG = 10 TC = 25 C TC = 125 C
o o
10 10
20
30
40
50
60
70
80
90
100
10 10
20
30
40
50
60
70
80
90
100
Collector Current, IC [A]
Collector Current, IC [A]
Figure 17. Switching Loss vs. Gate Resistance
50
Common Emitter VCC = 600V, VGE = 15V IC = 60A
Fig 18. Switching Loss vs. Collector Current
30
10
Switching Loss [mJ]
Eon
o
Switching Loss [mJ]
TC = 25 C
o
10
TC = 125 C
Eon
1
Eoff
Eoff
Common Emitter VCC = 600V, VGE = 15V IC = 60A TC = 25 C TC = 125 C
o o
1 10
20 30 40 Gate Resistance, RG []
50
0.1 10
20
30
40
50
60
70
80
90
100
Collector Current, IC [A]
FGA50N100BNTD2 Rev. A
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FGA50N100BNTD2 1000V, 50A NPT-Trench IGBT CO-PAK
Typical Performance Characteristics
Figure 19. Turn off Switching SOA Characterisics
250
Figure 20. Forward Characteristics
200
100
100
Collector Current, IC [A]
TJ = 125 C
o
Forward Current, IF [A]
10
TJ = 25 C
o
10
1
TC = 25 C TC = 125 C
o o
Safe Operating Area VGE = 15V, TC = 125 C
o
1 1 10 100 1000 3000
Collector-Emitter Voltage, VCE [V]
0.1 0 1 2 3 4 Forward Voltage, VF [V] 5 6
Figure 21. Reverse Current
300
Figure 22. Reverse Recovery Characteristics vs. di/dt
80
Reverse Recovery Time, Trr[ns]
10
100
Reverse Current , IR [A]
TJ = 125 C
o
Trr
60 8
Reverse Recovery Current, Irr[A]
10
Irr
6 40 4 20
IF = 60A
1
0.1
2
TC = 25 C
o
0.01
TJ = 25 C
o
1E-3 50
200
400 600 800 Reverse Voltage, VR [V]
1000
0 20
40
60
0 80 100 120 140 160 180 200
di/dt[A/s]
Figure 23. Reverse Recovery Characteristics vs. Forward Current
80
Reverse Recovery Time, Trr [ns]
6
Reverse Recovery Current, Irr[A]
Trr Irr
70 4
di/dt = 100A/s TC = 25 C
o
60 10
20
30 40 50 Forward Current,IF[A]
2 60
FGA50N100BNTD2 Rev. A
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FGA50N100BNTD2 1000V, 50A NPT-Trench IGBT CO-PAK
Typical Performance Characteristics
Figure 24.Transient Thermal Impedance of IGBT
1
Thermal Response [Zthjc]
0.5 0.2
0.1
0.1 0.05 0.02
PDM t1 t2
0.01
0.01 single pulse
Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC
1E-3 1E-5
1E-4
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
FGA50N100BNTD2 Rev. A
7
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FGA50N100BNTD2 1000V, 50A NPT-Trench IGBT CO-PAK
Mechanical Dimensions
TO-3PN
FGA50N100BNTD2 Rev. A
8
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FGA50N100BNTD2 1000V, 50A NPT-Trench IGBT CO-PAK
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Rev. I38
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
FGA50N100BNTD2 Rev. A
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